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| Si6926ADQ New Product Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.030 @ VGS = 4.5 V 20 0.033 @ VGS = 3.0 V 0.035 @ VGS = 2.5 V 0.043 @ VGS = 1.8 V ID (A) 4.5 4.2 3.9 3.6 D1 D2 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S1 Ordering Information: Si6926ADQ-T1--E3 (Lead Free) N-Channel MOSFET S2 N-Channel MOSFET D 8 D2 7 S2 6 S2 5 G2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 20 "8 4.5 3.6 20 0.83 1.0 0.64 Steady State Unit V 4.1 3.3 A 0.69 0.83 0.53 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72754 S-40230--Rev. A, 16-Feb-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 90 126 65 Maximum 125 150 80 Unit _C/W C/W 1 Si6926ADQ Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 5 V VGS = 4.5 V, ID = 4.5 A Drain-Source On-State Resistanceb rDS(on) VGS = 3.0 V, ID = 4.2 A VGS = 2.5 V, ID = 3.9 A VGS = 1.8 V, ID = 3.6 A Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = 10 V, ID = 4.5 A IS = 0.83 A, VGS = 0 V 10 0.024 0.026 0.029 0.035 26 0.6 1.1 0.030 0.033 0.035 0.043 S V W 0.40 1.0 "100 1 5 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 0.83 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W VDS = 10 V, VGS = 4.5 V, ID = 4.5 A 7.5 1.2 1.2 1.9 6 16 46 9 20 12 25 70 15 40 ns W 10.5 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 Transfer Characteristics 12 1.5 V 12 8 8 TC = 125_C 4 25_C -55_C 1.00 1.25 1.50 1.75 2.00 4 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0.00 0.25 0.50 0.75 VGS - Gate-to-Source Voltage (V) Document Number: 72754 S-40230--Rev. A, 16-Feb-04 2 Si6926ADQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.05 r DS(on) - On-Resistance ( W ) 1200 1000 VGS = 2.5 V 0.03 VGS = 3.0 V C - Capacitance (pF) 800 600 400 200 0 4.0 8.0 12.0 16.0 20.0 0 Crss 4 8 12 16 20 Coss Vishay Siliconix Capacitance 0.04 Ciss 0.02 VGS = 4.5 V 0.01 0.00 0.0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 2 4 6 8 10 Qg - Total Gate Charge (nC) VDS = 10 V ID = 4.5 A 1.4 rDS(on) - On-Resiistance (Normalized) 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 4.5 A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.08 0.07 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 On-Resistance vs. Gate-to-Source Voltage ID = 4.5 A TJ = 25_C 1 0.0 1 2 3 4 5 6 7 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72754 S-40230--Rev. A, 16-Feb-04 www.vishay.com 3 Si6926ADQ Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 0.1 V GS(th) Variance (V) ID = 250 mA -0.0 Power (W) -0.1 -0.2 -0.3 -0.4 -50 20 15 10 5 30 25 Single Pulse Power, Junction-to-Ambient -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) 100 Safe Operating Area, Junction-to-Case Limited by rDS(on) IDM Limited 10 I D - Drain Current (A) 1 ms 1 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 1 10 10 ms 100 ms 1s 10 s dc 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 126_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72754 S-40230--Rev. A, 16-Feb-04 Si6926ADQ New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-4 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72754 S-40230--Rev. A, 16-Feb-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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